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  • 1 CNRS Groupe “Activation des Réactions Nucléaires à l'Analyse Chimique” Service du Cyclotron 3A, Rue de la Férollerie 45045 Orleans (France)
  • 2 University of Rabat Morocco
  • 3 CNRS Groupe PHASE, Centre de Recherches Nucléaires Strasbourg France
  • 4 Los Alamos National Laboratory Los Alamos NM USA
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Abstract  

Several examples of improvements or of new developments in the field of charged particle activation analysis applied to the study of semiconductors are described: determination of carbon at the sub-ppb level in GaAs, use of 20 to 30 MeV protons for trace analysis in InP, study of radioactivation with 12 MeV tritons, and use of channeling to study the lattice location of carbon atoms at trace level in GaAlAs.