Nuclear reaction analysis of boron and oxygen in silicon

E. Ligeon; A. Bontemps

doi:10.1007/bf02521000

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Journal of Radioanalytical and Nuclear Chemistry

Volume/Issue:: Volume 12: Issue 2

Nuclear reaction analysis of boron and oxygen in silicon

Authors:

E. Ligeon

E. Ligeon C.E.N. Department de Recherche Fondamentale Grenoble France

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A. Bontemps

A. Bontemps C.E.N. Department de Recherche Fondamentale Grenoble France

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Pages:: 335–351

Online Publication Date:: 09 Jan 2007

Publication Date:: 01 Dec 1972

Article Category:: Research Article

DOI:: https://doi.org/10.1007/bf02521000

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Abstract

The main characteristics of analysis by the nuclear method at low energy are summarized. The experimental set-up, and especially the target chamber arrangement are shown. Nuclear analyses of boron and oxygen in a silicon substrate are presented; sensitivity, accuracy and competing reactions have been studied. The analysis of boron and oxygen is possible, although these elements give interfering reactions. Results concerning homogeneity in the sample surface (for diffused or implanted boron), a diffusion study (SiO₂−Si exchange) and profile measurements are presented.

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Journal of Radioanalytical and Nuclear Chemistry

Print ISSN:: 0236-5731

Online ISSN:: 1588-2780

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Journal of Radionalytical and Nuclear Chemistry
Language	English
Size	A4
Year of Foundation	1968
Volumes per Year	1
Issues per Year	12
Founder	Akadémiai Kiadó
Founder's Address	H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher	Akadémiai Kiadó Springer Nature Switzerland AG
Publisher's Address	H-1117 Budapest, Hungary 1516 Budapest, PO Box 245. CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible Publisher	Chief Executive Officer, Akadémiai Kiadó
ISSN	0236-5731 (Print)
ISSN	1588-2780 (Online)