The use of secondary ionic emission and nuclear reactions to determine the parameters in the manufacture of a planar transistor

J. Monnier; H. Hilleret; E. Ligeon; J. Quoirin

doi:10.1007/bf02521001

Journal of Radioanalytical and Nuclear Chemistry

Volume/Issue:: Volume 12: Issue 2

The use of secondary ionic emission and nuclear reactions to determine the parameters in the manufacture of a planar transistor

Authors:

J. Monnier

J. Monnier Laboratoire d'Electronique et de Technologie de l'Informatique LETI

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H. Hilleret

H. Hilleret C.E.N. Département de Chimie Appliquée Grenoble France

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E. Ligeon

E. Ligeon C.E.N. Département de Recherche Fondamentale Grenoble France

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, and

J. Quoirin

J. Quoirin Laboratoire d'Electronique et de Technologie de l'Informatique LETI

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Pages:: 353–366

Online Publication Date:: 09 Jan 2007

Publication Date:: 01 Dec 1972

Article Category:: Research Article

DOI:: https://doi.org/10.1007/bf02521001

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Abstract

Several microanalytical problems arising in the study of the manufacture of a planar bipolar transistor are solved using the techniques of nuclear reactions and secondary ionic emission analysis. The results obtained permit a comparison of the possibilities of the two methods.

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Journal of Radioanalytical and Nuclear Chemistry

Print ISSN:: 0236-5731

Online ISSN:: 1588-2780

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Journal of Radionalytical and Nuclear Chemistry
Language	English
Size	A4
Year of Foundation	1968
Volumes per Year	1
Issues per Year	12
Founder	Akadémiai Kiadó
Founder's Address	H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher	Akadémiai Kiadó Springer Nature Switzerland AG
Publisher's Address	H-1117 Budapest, Hungary 1516 Budapest, PO Box 245. CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible Publisher	Chief Executive Officer, Akadémiai Kiadó
ISSN	0236-5731 (Print)
ISSN	1588-2780 (Online)