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  • 1 University of Jordan Department of Physics (Amman-Jordan)
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Abstract  

The ion-beam mixing of Sn thin film evaporated on silicon has been investigated by continuously measuring the electrical resistivity of the sample during irradiation by Kr ions. The resistivity results exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing condition. The variation of the volume fraction of intermixed atoms as a function of the ion dose has been deduced and compared with a semiempirical formula to explain the observed mixing kinetics. A linear dependence of the volume fraction of the intermixed atoms on the fluence is observed, which is a signature of recoil type mixing.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)