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  • 1 National Tsing Hua University Institute of Nuclear Science 30043 Hsinchu Taiwan (R.O.C.
  • 2 Ben Gurion University Department of Nuclear Engineering 84102 Beer Sheva Israel
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Abstract  

The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.