Authors:
R. Liu National Tsing Hua University Institute of Nuclear Science 30043 Hsinchu Taiwan (R.O.C.

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P. Chen National Tsing Hua University Institute of Nuclear Science 30043 Hsinchu Taiwan (R.O.C.

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Z. Alfassi National Tsing Hua University Institute of Nuclear Science 30043 Hsinchu Taiwan (R.O.C.

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M. Yang National Tsing Hua University Institute of Nuclear Science 30043 Hsinchu Taiwan (R.O.C.

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Abstract  

The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)