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  • 1 Peking University Institute of Heavy Ion Physics 100 871 Beijing (PR China)
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Abstract  

Combining the Charged Particle Activation Analysis (CPAA) and the Channeling Technique, the partial concentrations of the impurity carbon atoms in different crystal lattice locations of GaAs were claculated. The calculated results show that at lower total concentrations (0.3 ppm), carbon atoms occupy principally the octahedral and displaced octahedral interstitial positions, but at higher total concentrations (2 ppm), the substitutional carbon plays a principal role.