Journal of Radioanalytical and Nuclear Chemistry
Volume/Issue:
Volume 151: Issue 2
Determination of impurities in semiconductor grade silicon by instrumental neutron activation analysis
Authors:
K. Park Korea Institute of Energy and Resources 71-2, Jang-dong, Youseong-gu 302-343 Daejeon (Korea)

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N. Kim Korea Institute of Energy and Resources 71-2, Jang-dong, Youseong-gu 302-343 Daejeon (Korea)

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H. Woo Korea Institute of Energy and Resources 71-2, Jang-dong, Youseong-gu 302-343 Daejeon (Korea)

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D. Kim Korea Institute of Energy and Resources 71-2, Jang-dong, Youseong-gu 302-343 Daejeon (Korea)

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J. Kim Korea Institute of Energy and Resources 71-2, Jang-dong, Youseong-gu 302-343 Daejeon (Korea)

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H. Choi Korea Institute of Energy and Resources 71-2, Jang-dong, Youseong-gu 302-343 Daejeon (Korea)

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Pages:
373–378
Online Publication Date:
13 Aug 2005
Publication Date:
17 Oct 1991
Article Category:
Research Article
DOI:
https://doi.org/10.1007/bf02035497
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Abstract  

Instrumental neutron activation analysis has been applied to semiconductor grade silicon to study the concentration levels of impurity elements, the contamination during the single crystal growing process, and the vertical and radial distributions of impurities, along with the decontamination effect in the analysis. Twenty elements of Au, Br, As, W, Cr, Co, Na, Eu, La, Se, Zn, U, Th, Hf, Fe, Sb, Ag, Ce, Tb and Ta have been analyzed in p- and n-type wafers, single crystals and a polycrystal by a single comparator method using two comparators of gold and cobalt. Considerable surface contamination has been found and could be removed by etching the surface with nitric and hydrofluoric acid before and after irradiation. The impurity concentration has been found to be generally increased in the process of single crystal growth. The vertical and radial distributions of impurities have revealed that some impurity elements were more concentrated in the top region of a single crystal rod than in the middle region, and that Br, Cr, La, Eu and Sb were enriched in the central region and As, U and Fe in the outer region.

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Cover Journal of Radioanalytical and Nuclear Chemistry
Journal of Radioanalytical and Nuclear Chemistry
Print ISSN:
0236-5731
Online ISSN:
1588-2780

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation		 1968
Volumes
per Year		 1
Issues
per Year		 12
Founder Akadémiai Kiadó
Founder's
Address		 H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address		 H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher		 Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)

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