Authors:
Y. Shiokawa Tohoku University Institute for Materials Research Katahira 2-1-1, Aoba-ku 980 Sendai (Japan)

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R. Amano Kanazawa University School of Allied Medical Professions Kodatsuno 5-11-80 920 Kanazawa (Japan)

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A. Nomura Tohoku University Institute for Materials Research Katahira 2-1-1, Aoba-ku 980 Sendai (Japan)

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M. Yagi Tohoku University Institute for Materials Research Katahira 2-1-1, Aoba-ku 980 Sendai (Japan)

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Abstract  

Preparation of thin film deposits of lanthanide, thorium and uranium oxides has been studied by chemical vapor deposition (CVD) method using -diketonate metal chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and some reactant gases as starting materials. The deposition process was carried out using a special apparatus designed for the CVD method at atmospheric pressure and temperatures as low as 400–600°C.As a result, it was demonstrated that each chelate used was well suited for the above purpose by its high volatility and reactivity with the reactant, especially with water vapor.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)