Preparation of thin films of lanthanide (Ln) sulfides has been studied by the chemical vapor deposition (CVD) method, using metal -diketonato chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and reactant H2S gas as starting materials. Two kinds of sulfides, Ln2O2S oxysulfides and EuS monosulfide, were obtained as thin films at temperatures as low as 390–570 °C. The CVD method was confirmed to be suited for the above purpose.