Authors:
R. Amano Kanazawa University School of Allied Medical Professions Kodatsuno 5-11-80 920 Kanazawa Japan

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Y. Shiokawa Tohoku Univesity Institute of Materials Research Katahira 2-1-1, Aoba-ku 980 Sendai Japan

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Abstract  

Preparation of thin films of lanthanide (Ln) sulfides has been studied by the chemical vapor deposition (CVD) method, using metal -diketonato chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and reactant H2S gas as starting materials. Two kinds of sulfides, Ln2O2S oxysulfides and EuS monosulfide, were obtained as thin films at temperatures as low as 390–570 °C. The CVD method was confirmed to be suited for the above purpose.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)

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