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  • 1 Kyoto University Research Reactor Institute Kumatori-cho, Sennan-gun 590-04 Osaka (Japan)
  • 2 Fujitsu Laboratories Ltd. Semiconductor Laboratory Wakamiya 243-01 Morinosato, Atsugi (Japan)
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Abstract  

Neutron activation analysis was applied to the determination of trace impurity elements in a silicon ingot. Detection limits of 36 elements were calculated semi — empirically and compared with minimum concentrations detected in a silicon single crystal. The sources of the impurities were estimated from element concentrations detected in polycrystalline silicon and a quartz crucible. Segregation coefficients were determined from the concentration curves in a single crystal and discussed by comparing with reported values.