Authors:
T. Shigematsu Nippon Telegraph and Telephone Corporation NTT Interdisciplinary Research Laboratories Tokai 319-11 Ibaraki-ken Japan

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H. Yonezawa Nippon Telegraph and Telephone Corporation NTT Interdisciplinary Research Laboratories Tokai 319-11 Ibaraki-ken Japan

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Y. Sato Nippon Telegraph and Telephone Corporation NTT LSI Laboratories 3-1 Morinosato Wakamiya, Atsugi 243-01 Kanagawa-ken Japan

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K. Imai Nippon Telegraph and Telephone Corporation NTT LSI Laboratories 3-1 Morinosato Wakamiya, Atsugi 243-01 Kanagawa-ken Japan

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Abstract  

A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO2–Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)