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  • 1 Cornell University Nuclear Science and Engineering Program, Ward Laboratory 14853 Ithaca New York USA
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We present results from our use of neutron activation analysis (NAA) for the measurement and interpretation of the elemental content of materials being researched for applications in microelectronics. Examples include characterization of silicon-germanium and nickel silicide alloys, magnesium silicate crystals and ceramics for packaging of integrated circuits. High resolution delayed X-ray spectroscopy has been successfully employed as a complement to conventional gamma-ray analysis for determination of relative impurity concentrations. Fast neutron induced interferences are removed from gamma-ray spectra via the internal standard correction technique, based on the measurement of fast reaction rates.