Authors:
H. Yonezawa NTT Interdisciplinary Laboratory 319-11 Tokai, Ibaraki (Japan)

Search for other papers by H. Yonezawa in
Current site
Google Scholar
PubMed
Close
,
C. Yonezawa Japan Atomic Energy Research Institute 319-11 Tokai, Ibaraki (Japan)

Search for other papers by C. Yonezawa in
Current site
Google Scholar
PubMed
Close
, and
T. Shigematsu NTT Interdisciplinary Laboratory 319-11 Tokai, Ibaraki (Japan)

Search for other papers by T. Shigematsu in
Current site
Google Scholar
PubMed
Close
Restricted access

Abstract  

Instrumental charged particle activation analysis (CPAA) for determining boron in a thin surface layer of silicon was developed. The nuclear reaction and incident energy were selected in order to minimize any interference from surface or bulk impurities. Thin boron film was used as a standard sample and its boron content was determined by neutron induced prompt -ray analysis. As a result, we were able to determine11B and10B at 1015 atoms/cm2 with an accuracy of better than 3% by 4 MeV proton and 7 MeV -bombardment, respectively. Each boron isotope could be determined down to 1013 atoms/cm2. Our CPAA was applied to determine boron in a boron implanted silicon wafer of a SIMS standard sample.

  • Collapse
  • Expand

To see the editorial board, please visit the website of Springer Nature.

Manuscript Submission: HERE

For subscription options, please visit the website of Springer Nature.

Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)