Authors:
T. Shigematsu NTT Interdisciplinary Research Laboratories Nippon Telegraph and Telephone Corporation Tokai 319-11 Ibaraki-ken (Japan)

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M. Polasek NTT Interdisciplinary Research Laboratories Nippon Telegraph and Telephone Corporation Tokai 319-11 Ibaraki-ken (Japan)

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H. Yonezawa NTT Interdisciplinary Research Laboratories Nippon Telegraph and Telephone Corporation Tokai 319-11 Ibaraki-ken (Japan)

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Abstract  

In order to determine iron on silicon wafer surface at a level of 1014 atoms·m–2 the efficiency of a well-type Ge detector for59Fe -ray emissions was measured and a low temperature silicon direct bonding technique was developed. With silicon direct bonding at a temperature of 350 to 650°C iron remains near the interface of the bound silicon. The iron contamination of the interface escaped from the interface can be ignored with this technique. The value of iron obtained was (2.7 to 5.9)·1014 atoms · m–2 in the surface on silicon wafers.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)