Journal of Radioanalytical and Nuclear Chemistry
Volume/Issue:
Volume 211: Issue 1
Positron/positronium annihilation in nanocrystalline silicon thin films
Authors:
X. Zhao The Institute of Physical and Chemical Research (RIKEN) Wako 351-01 Saitama (Japan)

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Y. Itoh The Institute of Physical and Chemical Research (RIKEN) Wako 351-01 Saitama (Japan)

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Y. Aoyagi The Institute of Physical and Chemical Research (RIKEN) Wako 351-01 Saitama (Japan)

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T. Sugano The Institute of Physical and Chemical Research (RIKEN) Wako 351-01 Saitama (Japan)

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K. Hirata National Institute of Materials and Chemical Research 305 Tsukuba, Ibaraki (Japan)

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Y. Kobayashi National Institute of Materials and Chemical Research 305 Tsukuba, Ibaraki (Japan)

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T. Ohdaira Electrotechnical Laboratory 305 Tsukuba, Ibaraki (Japan)

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R. Suzuki Electrotechnical Laboratory 305 Tsukuba, Ibaraki (Japan)

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T. Mikado Electrotechnical Laboratory 305 Tsukuba, Ibaraki (Japan)

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Pages:
31–38
Online Publication Date:
13 Aug 2005
Publication Date:
17 Nov 1996
Article Category:
Research Article
DOI:
https://doi.org/10.1007/bf02036252
Restricted access

Abstract  

Positron and positronium annihilation investigations were applied to nanocrystalline silicon (nc-Si) thin films, for the first time. The nc-Si thin films with average grain diameters of 3–5 nm show intense blue luminescence at room temperature. The nanometer-sized Si crystallites formed in amorphous Si (a-Si) matrix give rise to this luminescence. Very highS-parameters up to 0.62 were observed in the as-grown a-Si thin film suggesting positronium formation in the a-Si layer. The average lifetime of the positrons in the a-Si was determined to be about 520 ps. TheS-parameters dropped significantly to 0.53 by crystallization of the thin film at 800 °C for 10 seconds, which was almost the same to the value observed in bulk Si (100) substrate. Further crystallization from 60 seconds to 1 hour showed smaller change in theS-parameters than that from the a-Si to 10 seconds. The large change in theS-parameters due to the annealing might be caused by the formation of Si nanocrystallites in a-Si matrix suggesting that positron is a sensitive probe for structural investigations of the nc-Si materials.

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Cover Journal of Radioanalytical and Nuclear Chemistry
Journal of Radioanalytical and Nuclear Chemistry
Print ISSN:
0236-5731
Online ISSN:
1588-2780

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation		 1968
Volumes
per Year		 1
Issues
per Year		 12
Founder Akadémiai Kiadó
Founder's
Address		 H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address		 H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher		 Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)

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