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  • 1 The Institute of Physical and Chemical Research (RIKEN) Wako 351-01 Saitama (Japan)
  • | 2 National Institute of Materials and Chemical Research 305 Tsukuba, Ibaraki (Japan)
  • | 3 Electrotechnical Laboratory 305 Tsukuba, Ibaraki (Japan)
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Positron and positronium annihilation investigations were applied to nanocrystalline silicon (nc-Si) thin films, for the first time. The nc-Si thin films with average grain diameters of 3–5 nm show intense blue luminescence at room temperature. The nanometer-sized Si crystallites formed in amorphous Si (a-Si) matrix give rise to this luminescence. Very highS-parameters up to 0.62 were observed in the as-grown a-Si thin film suggesting positronium formation in the a-Si layer. The average lifetime of the positrons in the a-Si was determined to be about 520 ps. TheS-parameters dropped significantly to 0.53 by crystallization of the thin film at 800 °C for 10 seconds, which was almost the same to the value observed in bulk Si (100) substrate. Further crystallization from 60 seconds to 1 hour showed smaller change in theS-parameters than that from the a-Si to 10 seconds. The large change in theS-parameters due to the annealing might be caused by the formation of Si nanocrystallites in a-Si matrix suggesting that positron is a sensitive probe for structural investigations of the nc-Si materials.

Manuscript Submission: HERE

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
per Year
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Founder Akadémiai Kiadó
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)