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  • 1 Kyoto University Research Reactor Institute Kumatori-cho 590-04 Sennan-gun, Osaka Japan
  • | 2 Fujitsu Ltd. Kamikodanaka, Nakahara-ku 211 Kawasaki Japan
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Abstract  

Instrumental neutron activation analysis was applied to the determination of trace impurity elements in a silicon single crystal. Impurity concentrations in polysilicon melt were compared with those in a single crystal. Impurity concentrations in artificial quartz were also compared with those in natural quartz. Segregation coefficients in Au, Ir and Sb were determined at different concentrations. The segregation coefficient of an element in a silicon single crystal is constant over a critical concentration, it becomes larger gradually under the critical one, and at last it becomes larger than 1.