Authors:
T. Takeuchi Kyoto University Research Reactor Institute Kumatori-cho 590-04 Sennan-gun, Osaka Japan

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Y. Nakano Kyoto University Research Reactor Institute Kumatori-cho 590-04 Sennan-gun, Osaka Japan

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T. Fukuda Fujitsu Ltd. Kamikodanaka, Nakahara-ku 211 Kawasaki Japan

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I. Hirai Fujitsu Ltd. Kamikodanaka, Nakahara-ku 211 Kawasaki Japan

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A. Osawa Fujitsu Ltd. Kamikodanaka, Nakahara-ku 211 Kawasaki Japan

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N. Toyokura Fujitsu Ltd. Kamikodanaka, Nakahara-ku 211 Kawasaki Japan

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Abstract  

Instrumental neutron activation analysis was applied to the determination of trace impurity elements in a silicon single crystal. Impurity concentrations in polysilicon melt were compared with those in a single crystal. Impurity concentrations in artificial quartz were also compared with those in natural quartz. Segregation coefficients in Au, Ir and Sb were determined at different concentrations. The segregation coefficient of an element in a silicon single crystal is constant over a critical concentration, it becomes larger gradually under the critical one, and at last it becomes larger than 1.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)