Authors:
T. Shigematsu Nippon Telegraph and Telephone Corporation NTT Interdisciplinary Research Laboratories 319-11 Tokai, Ibaraki-ken Japan

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M. Polasek Nippon Telegraph and Telephone Corporation NTT Interdisciplinary Research Laboratories 319-11 Tokai, Ibaraki-ken Japan

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H. Yonezawa Nippon Telegraph and Telephone Corporation NTT Interdisciplinary Research Laboratories 319-11 Tokai, Ibaraki-ken Japan

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M. Katoh Nippon Telegraph and Telephone Corporation NTT Interdisciplinary Research Laboratories 319-11 Tokai, Ibaraki-ken Japan

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Abstract  

The surface concentrations of copper and iron in currently used silicon wafers are lower than 1014 atoms·m–2. To determine such ultra-trace elements accurately by neutron activation analysis, we measured the efficiencies of a well-type Ge detector for59Fe -rays and64Cu annihilation -rays. We also developed methods for preparing samples for copper and iron analysis including a low-temperature silicon direct-bonding technique. We have applied these techniques to determine copper and iron on the surface of clean silicon wafers, and obtained concentrations of 1013–1014 atoms·m–2.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)