Results are presented of a study on the degradation and recovery of the electrical performance of MOSFETs processed on SIMOX
substrates, subjected to 1 and 2 MeV electron and to 20 MeV alpha-ray irradiations. The damage coefficient for alpha-ray irradiation
is about three orders of magnitude larger than the one for electron irradiation, which is attributed to the difference of
incident particle mass and the possibility of nuclear collision during radiation damage.