Abstract
Results are presented of a study on the degradation and recovery of the electrical performance of MOSFETs processed on SIMOX substrates, subjected to 1 and 2 MeV electron and to 20 MeV alpha-ray irradiations. The damage coefficient for alpha-ray irradiation is about three orders of magnitude larger than the one for electron irradiation, which is attributed to the difference of incident particle mass and the possibility of nuclear collision during radiation damage.
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| Journal of Radionalytical and Nuclear Chemistry | |
|---|---|
| Language | English |
| Size | A4 |
| Year of Foundation |
1968 |
| Volumes per Year |
1 |
| Issues per Year |
12 |
| Founder | Akadémiai Kiadó |
| Founder's Address |
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245. |
| Publisher | Akadémiai Kiadó Springer Nature Switzerland AG |
| Publisher's Address |
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245. CH-6330 Cham, Switzerland Gewerbestrasse 11. |
| Responsible Publisher |
Chief Executive Officer, Akadémiai Kiadó |
| ISSN | 0236-5731 (Print) |
| ISSN | 1588-2780 (Online) |
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