Authors:
B. Belin Istanbul Technical University Department of Physics, Faculty of Science and Letters 80626 Maslak, Istanbul Turkey

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P. Bode Delft University of Technology Interfaculty Reactor Institute Mekelweg 15 2629JB Delft The Netherlands

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R. Turan Middle East Technical University Ankara Turkey

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Th. Van Meerten Delft University of Technology Interfaculty Reactor Institute Mekelweg 15 2629JB Delft The Netherlands

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Abstract  

Implanted 74Ge and 120Sn concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)