Study of diffusion of impurities in semiconductor silicon by activation analysis and nuclear reaction methods

P. Kotas; I. Obrusnik; J. Kvitek; V. Hnatowicz

doi:10.1007/bf02516983

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Journal of Radioanalytical and Nuclear Chemistry

Volume/Issue:: Volume 30: Issue 2

Study of diffusion of impurities in semiconductor silicon by activation analysis and nuclear reaction methods

Authors:

P. Kotas

P. Kotas Tesla-Research Institute of Radiocommunications 142 21 Prague (Czechoslovakia)

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I. Obrusnik

I. Obrusnik Nuclear Research Institute 250 68 Řež (Czechoslovakia)

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J. Kvitek

J. Kvitek Czechoslovak Academy of Sciences Institute of Nuclear Physics 250 68 Řež (Czechoslovakia)

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, and

V. Hnatowicz

V. Hnatowicz Czechoslovak Academy of Sciences Institute of Nuclear Physics 250 68 Řež (Czechoslovakia)

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Pages:: 475–488

Online Publication Date:: 09 Jan 2007

Publication Date:: 01 Sep 1976

Article Category:: Research Article

DOI:: https://doi.org/10.1007/bf02516983

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Abstract

Diffusion of impurities is a basic operation in the technology of modern semiconductor devices especially integrated circuits. A knowledge of diffusion parameters such as concentration profile, diffusion depth and diffusion coefficient makes the optimization of a technological process possible. A destructive method of the step-by-step removal of the layers from the silicon single crystal slices irradiated in a nuclear reactor with subsequent determination of impurity contents was used in the diffusion studies of phosphorus, arsenic and gold. Phosphorus was determined by the beta counting of³²P after a separation, arsenic and gold were determined by means of a Ge(Li) gamma-ray spectroscopy without any chemical separation. The diffusion of boron was studied by the nondestructive method of the deconvolution of the energy spectrum of prompt alpha radiation from¹⁰B(n, α)⁷Li after thermal neutron irradiation.

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Journal of Radioanalytical and Nuclear Chemistry

Print ISSN:: 0236-5731

Online ISSN:: 1588-2780

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Journal of Radionalytical and Nuclear Chemistry
Language	English
Size	A4
Year of Foundation	1968
Volumes per Year	1
Issues per Year	12
Founder	Akadémiai Kiadó
Founder's Address	H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher	Akadémiai Kiadó Springer Nature Switzerland AG
Publisher's Address	H-1117 Budapest, Hungary 1516 Budapest, PO Box 245. CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible Publisher	Chief Executive Officer, Akadémiai Kiadó
ISSN	0236-5731 (Print)
ISSN	1588-2780 (Online)