Author:
H. Rausch Research Institute for Telecommunication Budapest (Hungary)

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Abstract  

Activation analysis and autoradiography were used to investigate the concentration distribution of contaminants in poly-Si−Si3N4−SiO2−Si substrate multilayer structures (SNOS) on sampling each technological product. Samples were irradiated for 36 hrs at a thermal neutron flux of 4·1013n·cm−2·sec−1. The thin films of the analysed sample were removed stepwise by selective chemical etching using appropriate masking techniques. Simultaneously autoradiographs were made of the surface of parallel samples activated under the same conditions. The concentration of the technological contaminants (e.g. Na, Cu, Au) increases in the junction interface of the layers as unambiguously shown by the results obtained.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)