A sensitive method of carbon determination in silicon by activation with deuterons and3He particles followed by chemical separation of the measured nuclides13N and11C has been developed. Aside from the etch removal after irradiation, it is essential for a low detection limit to avoid too
much thermal exposure of the target surface during the irradiation process, or else microflaw formation and diffusion on the
surface have to be anticipated. The ion current must have an optimal rather than a maximum value.