Authors:
H. Yonezawa Nippon Telegraph and Telephone Public Corporation Ibaraki Electrical Communication Laboratory 319-11 Tokai, Ibaraki (Japan)

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T. Shigematsu Nippon Telegraph and Telephone Public Corporation Ibaraki Electrical Communication Laboratory 319-11 Tokai, Ibaraki (Japan)

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K. Kudo Nippon Telegraph and Telephone Public Corporation Ibaraki Electrical Communication Laboratory 319-11 Tokai, Ibaraki (Japan)

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Abstract  

Oxygen in silicon was determined by the secondary nuclear reactions of6Li(n, α)T and16O(t, n)18F. Lithium fluoride was deposited in vacuum on fused quartz, covered with the sample and irradiated in a nuclear reactor. The depth profiles of18F in fused quartz and in silicon were observed, and enough depth to eliminate surface oxygen was estimated. On the basis of these results, oxygen was determined by the average cross-section method. Oxygen concentration in CZ silicon with various growing condition was 5–26 ppm and was consistent with those determined by the infrared absorption method. The detection limit of oxygen in silicon is 5 ppm.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)