Authors:
H. Rausch Central Research Institute for Physics Budapest Hungary

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A. Salamon Central Research Institute for Physics Budapest Hungary

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E. Szabó Central Research Institute for Physics Budapest Hungary

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Abstract  

Investigations have been made concerning the determination of special contaminants (e.g. oxygen, boron) in the surface layers or epitaxially grown layers of semi-conductor crystals. These contaminants are insensitive to the conventional (n, γ) analysis and for their activation charged particles (e.g. t, α) from nuclear reactions induced by the capture of reactor neutrons are used. The specific particle yield from such reactions, e.g.6Li(n,t)α, was studied. The optimum conditions for the producing of activating layers (containing Li) and their optimum contact with the sample under investigation are discussed. Considering the so-called activation depth, a method was developed for the appropriate removal of the activated layer and the elements to be determined are subsequently separated from the semiconductor matrix by a fast chemical procedure. The combined activation cross sections measured on standard samples are given for different compositions and species of activating layers.

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Journal of Radionalytical and Nuclear Chemistry
Language English
Size A4
Year of
Foundation
1968
Volumes
per Year
1
Issues
per Year
12
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 0236-5731 (Print)
ISSN 1588-2780 (Online)