Authors:
A. Derafa Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR-CNRS 6242, Aix Marseille III University, cc. 142, St Jérôme, Av. Normandie-Niemen, 13397, Marseille Cedex 20, France
LCMI, Département de Physique, Université Constantine, Route Ain el bey, 25000, Constantine, Algerie
LP3M, Département d’Optique et Mécanique de Précision, Université Sétif, 19000, Sétif, Algerie

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M.-C. Record Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR-CNRS 6242, Aix Marseille III University, cc. 142, St Jérôme, Av. Normandie-Niemen, 13397, Marseille Cedex 20, France

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D. Mangelinck Institut Matériaux Microélectronique et Nanosciences de Provence, IM2NP, UMR-CNRS 6242, Aix Marseille III University, cc. 142, St Jérôme, Av. Normandie-Niemen, 13397, Marseille Cedex 20, France

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R. Halimi LCMI, Département de Physique, Université Constantine, Route Ain el bey, 25000, Constantine, Algerie

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A. Bouabellou LCMI, Département de Physique, Université Constantine, Route Ain el bey, 25000, Constantine, Algerie

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Abstract

This study reports the phase formation in the ternary thin films system Mo–W–Si. The metallic films were deposited onto Si (100) substrate by sputtering. Two kinds of samples were prepared, either by sequential deposition or by co-deposition. The phase formation was investigated by In situ X-ray diffraction measurements from 300 to 900 °C. The influence of the sample preparation, namely sequential deposition and co-deposition, on the mechanism of phase formation has been evidenced.

  • 1. Chow, TP, Steckl, AJ. Refractory metal silicides: thin-film properties and processing technology. IEEE Trans Electron Devices 1983 30:14801497 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 2. McLachlan, DR, Avins, JB. Refractory metals silicides. Semicond Int 1984 7:129138.

  • 3. Mochizuki, T, Shibata, K, Inoue, T, Ohuchi, K. A new MOS process using molybdenum disilicide as a gate material. Jpn J Appl Phys Suppl 1978 17:3742 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 4. Crowder, BL, Zirinsky, S. 1 μm MOSFET VLSI technology: part VII—metal silicide interconnection technology—a future perspective. IEEE Trans Electron Devices 1979 26:369371 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 5. Krakhmalev, PV, Bergstron, J. Tribological behavior and wear mechanisms of MoSi2-base composites sliding against AA6063 alloy at elevated temperature. Wear 2006 260:450457 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 6. Subrahmanyam, J, Rao, RM. Combustion synthesis of MoSi2-WSi2 alloys. Mater Sci Eng A 1994 183:205210 .

  • 7. Zhang, H, Chen, P, Wang, MJ, Kiu, XW. Room-temperature mechanical properties of WSi2/MoSi2 composites. Rare Met 2002 21:304307.

  • 8. Xu, JG, Leng, Y, Li, HQ, Zhang, H. Preparation and characterization of SiC/(Mo, W)Si2 composites from powders resulting from a SHS in a chemical oven. Int J Refract Met Hard Mater 2009 27:7477 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 9. Guivarc'h, A, Auvray, P, Berthou, L, Le Cun, M, Boulet, JP, Henoc, P, Pelous, G, Martinez, A. Reaction kinetics of molybdenum thin films on silicon (111) surface. J Appl Phys 1978 49:233237 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 10. d’Heurle, FM, Petersson, CS, Tsai, MY. Observations on the hexagonal form of molybdenum silicide (MoSi2) and tungsten silicide (WSi2) films produced by ion implantation and on related snowplow effects. J Appl Phys 1980 51:59765980 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 11. Murarka, SP, Read, MH, Chang, CC. Hexagonal WSi2 in cosputtered (tungsten and silicon) mixture. J Appl Phys 1981 52:74507452 .

  • 12. Tsai, MY, d’Heurle, FM, Petersson, CS, Johnson, RW. Properties of tungsten silicide film of poly-crystalline silicon. J Appl Phys 1981 52:53505355 .

    • Crossref
    • Search Google Scholar
    • Export Citation
  • 13. Massalski, TB Binary alloy phase diagrams 1990 ASM International Materials Park.

  • 14. Villars, P, Prince, A, Okamoto, H Handbook of ternary alloy phase diagrams ASM International Materials Park 1995.

  • 15. Villars, P, Calvert, LD Pearson's handbook of crystallographic data for intermetallic phases 1991 ASM International Materials Park.

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Journal of Thermal Analysis and Calorimetry
Language English
Size A4
Year of
Foundation
1969
Volumes
per Year
1
Issues
per Year
24
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 1388-6150 (Print)
ISSN 1588-2926 (Online)