Kinetic analysis of the crystallization process in Bi4(As2S3)96 and Bi6(As2S3)94 glasses was performed based on DSC curves recorded under non-isothermal measurement conditions. Samples were thermally treated at different heating rates in the temperature range 300–770 K. The activation energy of crystallization E and the pre-exponential factor K0 are determined by the Kissinger method and the characteristic crystallization parameters m and n of investigated glasses by the Matusita method. For both crystallization processes the glass with 4 at.% of Bi is characterized by the mechanism of volume nucleation, which is manifested in the form of two-dimensional growth at the first crystallization process, and as three-dimensional at the second one. On the other hand, in the sample with 6 at.% Bi, the average value of the parameter m is close to one, which indicates one-dimensional crystal growth. Compatibility of the values of the parameters m and n suggests that this sample has a large number of crystallization centers, which do not increase significantly during the thermal treatment.
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Šiljegović, M, Lukić, SR, Skuban, F, Petrović, DM, Slankamenac, M2009Analysis of conductivity of glasses from the (As2S3)100−xBix system in direct and alternating regimes. J Optoelectron Adv Mater11:2049–2052.)| false
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