Polycrystalline PbTe thin film is prepared on glass substrate at 200 °C. PbTe thin film isN-type and the carriers are electrons. The incident energy of photons, 3.4 eV, generates more electron carriers as the distance decreases which give rise to photoelectric current. The density of donorsNd was determined to be 1.1×1020 cm−3 which is consistent with theN-type conduction of PbTe. The activation energies ofN-type PbTe thin films are 0.139, 0.139 and 0.126 eV below 60 °C which change toP-type above 60 °C. This may be due to generation of Pb vacancies in the lattice. The piezoresistivity is measured, the increase of conductivity may be due to displacements of lattice defects under applied stress.