Authors:
F. El-Mekawey Tanta University Physics Department, Faculty of Science Tanta Egypt Tanta Egypt

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A. Tawfik Tanta University Physics Department, Faculty of Science Tanta Egypt Tanta Egypt

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Polycrystalline PbTe thin film is prepared on glass substrate at 200 °C. PbTe thin film isN-type and the carriers are electrons. The incident energy of photons, 3.4 eV, generates more electron carriers as the distance decreases which give rise to photoelectric current. The density of donorsNd was determined to be 1.1×1020 cm−3 which is consistent with theN-type conduction of PbTe. The activation energies ofN-type PbTe thin films are 0.139, 0.139 and 0.126 eV below 60 °C which change toP-type above 60 °C. This may be due to generation of Pb vacancies in the lattice. The piezoresistivity is measured, the increase of conductivity may be due to displacements of lattice defects under applied stress.

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Journal of Thermal Analysis and Calorimetry
Language English
Size A4
Year of
Foundation
1969
Volumes
per Year
1
Issues
per Year
24
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 1388-6150 (Print)
ISSN 1588-2926 (Online)

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