View More View Less
  • 1 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie Rudower Chaussee 6 D-12489 Berlin Germany
  • 2 Gesellschaft für Förderung angewandter Optik, Optoelektronik, Quantenelektronik und Spektroskopie e. V. Rudower Chaussee 5 D-12489 Berlin Germany
Restricted access


New results of steady-state two-dimensional finite-element computations of temperature distributions of high power semiconductor laser arrays are presented. The influence of different thermal loads on the 2D temperature distribution in AlGaAs/GaAs gain-guided laser arrays is investigated. TheFEM model is tested by comparing it with analytical solutions. For numerical convenience, the latter is rewritten in a novel form, which is free of overflow problems. The maximum temperatures calculated by both methods agree within 1%. Several factors determining the thermal resistance of the device are quantitatively examined: the ratio of light emitting to non-emitting areas along the active zone, the amount of Joule losses, the current spreading, the solder thickness, and voids in the solder. This yields design rules for optimum thermal performance.

Monthly Content Usage

Abstract Views Full Text Views PDF Downloads
Sep 2020 0 0 0
Oct 2020 2 0 0
Nov 2020 1 1 0
Dec 2020 1 0 0
Jan 2021 5 0 0
Feb 2021 2 0 0
Mar 2021 0 0 0