Journal of Thermal Analysis and Calorimetry
Volume/Issue:
Volume 69: Issue 3
Characterization of thermal properties of porous silicon film/silicon using photoacoustic technique
Authors:
Q. Shen The University of Electro-Communications Department of Applied Physics and Chemistry 1-5-1 Chofugaoka Chofu, Tokyo 182-8585 Japan

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T. Toyoda The University of Electro-Communications Department of Applied Physics and Chemistry 1-5-1 Chofugaoka Chofu, Tokyo 182-8585 Japan

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Pages:
1067–1073
Online Publication Date:
02 Nov 2004
Publication Date:
01 Jul 2002
Article Category:
Research Article
DOI:
https://doi.org/10.1023/a:1020661501961
Keywords:
porosity; porous silicon; thermal diffusion; carrier diffusion; photoacoustic technique; thermal diffusivity
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Abstract  

We have applied photoacoustic (PA) technique to study the thermal properties of porous silicon (PS) films formed on p-type Si substrates by electrochemical anodic etching. Four PS samples with close thicknesses but greatly different porosities (from 20 to 60%) were examined. From the dependences of the PA signals on the modulation frequency of excitation light measured under a transmission detection configuration (TDC), effective thermal diffusivities for the two-layered PS/Si samples were determined and found to decrease greatly from 0.095 to 0.020 cm2 s-1 as the porosity increased from 20 to 60%.

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Cover Journal of Thermal Analysis and Calorimetry
Journal of Thermal Analysis and Calorimetry
Print ISSN:
1388-6150
Online ISSN:
1572-8943

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Journal of Thermal Analysis and Calorimetry
Language English
Size A4
Year of
Foundation		 1969
Volumes
per Year		 1
Issues
per Year		 24
Founder Akadémiai Kiadó
Founder's
Address		 H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address		 H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher		 Chief Executive Officer, Akadémiai Kiadó
ISSN 1388-6150 (Print)
ISSN 1588-2926 (Online)

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