Authors:
Y. Sawada Tokyo Polytechnic University 1583, Iiyama, Atsugi Kanagawa 243-0297 Japan E-mail 1583, Iiyama, Atsugi Kanagawa 243-0297 Japan E-mail

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S. Seki Tokyo Polytechnic University 1583, Iiyama, Atsugi Kanagawa 243-0297 Japan E-mail 1583, Iiyama, Atsugi Kanagawa 243-0297 Japan E-mail

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M. Sano ESCO Co. Ltd. 1-3-10 Nishikubo, Musashino Tokyo 180-0013 Japan Nishikubo, Musashino Tokyo 180-0013 Japan

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N. Miyabayashi ESCO Co. Ltd. 1-3-10 Nishikubo, Musashino Tokyo 180-0013 Japan Nishikubo, Musashino Tokyo 180-0013 Japan

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K. Ninomiya ESCO Co. Ltd. 1-3-10 Nishikubo, Musashino Tokyo 180-0013 Japan Nishikubo, Musashino Tokyo 180-0013 Japan

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A. Iwasawa ESCO Co. Ltd. 1-3-10 Nishikubo, Musashino Tokyo 180-0013 Japan Nishikubo, Musashino Tokyo 180-0013 Japan

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T. Tsugoshi Simoshidami Moriyama National Institute of Advanced Industrial Science and Technology Nagoya 463-8560 Japan Nagoya 463-8560 Japan

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R. Ozao North Shore College of SONY Institute 428 Nurumizu Atsugi, Kanagawa 243-8501 Japan Atsugi, Kanagawa 243-8501 Japan

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Y. Nishimoto Kanagawa University Department of Chemistry Faculty of Science 2946 Tsutchiya Hiratsuka, Kanagawa 259-1293 Japan Hiratsuka, Kanagawa 259-1293 Japan

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Abstract  

Tin-doped indium oxide In2O3 (indium-tin-oxide) transparent conducting films were fabricated on silicon substrates by a dip coating process. The thermal analysis of the ITO films was executed by temperature-programmed desorption (TPD) or thermal desorption spectroscopy (TDS) in high vacuum. Gas evolution from the ITO film mainly consisted of water vapor. The total amount of evolved water vapor increased on increasing the film thickness from approx. 25 to 250 nm and decreased by increasing the preparation temperature from 365 to 600C and by annealing at the same temperature for extra 10 h. The evolution occurred via two steps; the peak temperatures for 250 nm thick films were approx. 100-120 and 205-215C. The 25 nm thick films evolved water vapor at much higher temperatures; a shoulder at approx. 150-165C and a peak at approx. 242C were observed. The evolution temperatures increased by increasing the preparation and the annealing temperatures except in case of the second peak of the 25 nm thick films. The evolution of water vapor at high temperature was tentatively attributed to thermal decomposition of indium hydroxide, In(OH)3, formed on the surface of the nm-sized ITO particles.

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Journal of Thermal Analysis and Calorimetry
Language English
Size A4
Year of
Foundation
1969
Volumes
per Year
1
Issues
per Year
24
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 1388-6150 (Print)
ISSN 1588-2926 (Online)

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