L. Chang-WeiAnalysis & Testing Center for Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P. R. China 200050
Q. Ling-JunAnalysis & Testing Center for Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P. R. China 200050
X. Hua-QingAnalysis & Testing Center for Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P. R. China 200050
X. Tong-GengAnalysis & Testing Center for Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P. R. China 200050
We studied the removal process of excessive free
carbon in the nano-SiC powder by TG-DTA-MS, XRD and TEM three methods. The
studies showed that the temperature of removing excessive free carbon in the
nano-SiC powder should be about 750°C in air.