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  • 1 National Metal and Materials Technology Center (MTEC) Klong Luang Pathumthani Thailand 12120 114 Paholyothin Road, Klong 1 Klong Luang Pathumthani Thailand 12120 114 Paholyothin Road, Klong 1
  • | 2 Mahidol University Department of Chemistry, Faculty of Science Bangkok Thailand 10400 Rama VI Rd. Bangkok Thailand 10400 Rama VI Rd.
  • | 3 Tokyo Polytechnic University Department of Industrial Chemistry, Graduate School of Engineering Iiyama Atsugi Japan 243-0297 Iiyama Atsugi Japan 243-0297
  • | 4 College of Nihon University Department of Materials Chemistry and Engineering Tamura, Koriyama Japan 963-8642 Tamura, Koriyama Japan 963-8642
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Abstract  

Fluorine-doped tin dioxide (FTO) films were deposited on silicon wafers by inverted pyrosol technique using solutions with different doping concentration (F/Sn=0.00, 0.12, 0.75 and 2.50). The physical and electrical properties of the deposited films were analyzed by SEM, XRF, resistivity measurement by four-point-probe method and Hall coefficient measurement by van der Pauw method. The electrical properties showed that the FTO film deposited using the solution with F/Sn=0.75 gave a lowest resistivity of 3.210–4 ohm cm. The FTO films were analyzed by temperature programmed desorption (TPD). Evolved gases from the heated specimens were detected using a quadruple mass analyzer for mass fragments m/z, 1(H+), 2(H2+), 12(C+), 14(N+), 15(CH3+), 16(O+), 17(OH+ or NH3+), 18(H2O+ or NH4+), 19(F+), 20(HF+), 28(CO+ or N2+), 32(O2+), 37(NH4F+), 44(CO2+), 120(Sn+), 136(SnO+) and 152(SnO2+). The majority of evolved gases from all FTO films were water vapor, carbon monoxide and carbon dioxide. Fluorine (m/z 19) was detected only in doped films and its intensity was very strong for highly-doped films at temperature above 400C.

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