Authors:
L. Zelenina

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T. Chusova Siberian Branch of Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Ac. Lavrentyev Prospect 3 630090 Novosibirsk Russia

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Yu. Stenin Siberian Branch of Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Ac. Lavrentyev Prospect 3 630090 Novosibirsk Russia

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V. Bakovets Siberian Branch of Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Ac. Lavrentyev Prospect 3 630090 Novosibirsk Russia

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Abstract  

The enthalpies and temperatures of melting of RSi(CH3)3, R4Si, R3P, R3As, R3Sb, R3Bi, R2Te and R2Hg (R=C6F5) were obtained by scanning calorimetry measurements. The pressure of the saturated and unsaturated vapors of RSi(CH3)3, R2Si(CH3)2, R4Si, R3Ga, R3P, R3As, R3Sb, R3Bi, R2Te and R2Hg has been measured by the static method with a membrane-gauge manometer. It was established that all investigated substances proceeded to vapor as monomers. Equations approximating the dependences of saturated vapor pressures on temperature and the enthalpies and entropies of vaporization were obtained. Grafite films with silicon intercalated up to 25 at.% were grown by CVD using R4Si as a precursor. These films showed semiconductor properties in the temperature interval 80–300 K.

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Journal of Thermal Analysis and Calorimetry
Language English
Size A4
Year of
Foundation
1969
Volumes
per Year
1
Issues
per Year
24
Founder Akadémiai Kiadó
Founder's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
Publisher Akadémiai Kiadó
Springer Nature Switzerland AG
Publisher's
Address
H-1117 Budapest, Hungary 1516 Budapest, PO Box 245.
CH-6330 Cham, Switzerland Gewerbestrasse 11.
Responsible
Publisher
Chief Executive Officer, Akadémiai Kiadó
ISSN 1388-6150 (Print)
ISSN 1588-2926 (Online)