The deposition of
nanowires for interconnects in nanoelectronic devices werestudied
morphologically by scanning electron microscopy (SEM), atomic force microscopy
(AFM) and by in-situ resistance measurements. The deposition and basic
characterization of nanometer size tungsten wires by gas injection (GIS) and
focused ion beams (FIB) was carried out in-situ in a LEO 1540 XB workstation.
The I(V) measurement showed that the deposited W wires have ohmic
characteristic. The variation of the resistance during an ex-situ heating was
linear with a low thermal coefficient (4% of the pure metallic W).