In this column Periodica Mathematica Hungarica publishes current research problems whose proposers believe them to be within reach of existing methods. Manuscripts should preferably contain the background of the problem and all references known to the author. The length of the manuscript should not exceed two doublespaced type-written pages.
Authors:B. Belin, P. Bode, R. Turan, and Th. Van Meerten
Implanted 74Ge and 120Sn concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.