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  • Author or Editor: Á. Gyulai x
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Abstract  

A measuring technique based on the alpha particles being released from the10B(n, α) nuclear reaction and using the time-of-flight technique at a periodically pulsing reactor was developed. Non-destructive determination for the range distribution of boron impurities in ion-implanted silicon have been performed. Projected ranges obtained in the energy region 20–80 keV are compared to calculated results and to other experiments. Examples are shown for some typical boron distributions before and after annealing the sample.

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Abstract  

It is demonstrated that the information obtained by Rutherford backscattering spectrometry and channeling technique can substantially help in the construction of a realistic optical model for the ellipsometry of ion-implanted silicon. In the case of fully amorphous ion-bombarded layers, the ellipsometry is a fast, non-destructive and contactless method to estimate the thickness of these films. For buried and partially disordered layers a qualitative interpretation of different trajectories in the - plance can be given on the basis of channeling measurements.

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