Search Results

You are looking at 1 - 1 of 1 items for :

  • Author or Editor: P. Turán x
  • Chemistry and Chemical Engineering x
  • Refine by Access: All Content x
Clear All Modify Search

Abstract  

Implanted 74Ge and 120Sn concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.

Restricted access