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  • Author or Editor: J.-J. Woo x
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Abstract  

Monochromatic MeV-energy neutron source for secondary reaction was developed utilizing tritium embedded titanium (Ti-3H) thin film via 3H(p,n)3He reaction. We have measured the neutron energies and the energy spread by resonance reactions of 12C(n,tot) and 28Si(n,tot). The available energy was within the range from 0.6 to 2.6 MeV. Energy spread was 1.6% at energy of 2.077 MeV. The flux in the beam direction was determined to be 3.76·107 n/s/sr by irradiating 197Au by about 2 MeV neutrons. This source was shown to be useful for measurements of nuclear data by measuring the total cross sections of neutrons on Fe and comparing these data to the data of ENDF-6.

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Abstract  

Trace impurity elements in high purity copper metal (4 mine class) put on the market were analyzed by Instrumental Neutron Activation Analysis (INAA) and the results compared with those from Graphite Furnace Atomic Absorption Spectrophotometry (GFAAS) and Inductively Coupled Plasma Atomic Emission Spectrophotometry (ICP-AES). The sample irradiation was done at the irradiation facilities (thermal neutron flux, 5·1012 n·cm−2·s−1) of the TRIGA Mark-III research reactor in the Korea Atomic Energy Research Institute. Four unalloyed copper standards (NIST SRM # 393, 394, 395 and 398) were used to identify the accuracy and precision of the analytical procedure. The homogeneity of samples was assessed by means of the elements such as Ag, As, Co, Sb, Se and Zn. The analytical results of INAA, GFAAS and ICP-AES were in good agreement within expected uncertainties each other and showed the possibility of using them for the analytical quality control.

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Abstract  

A nanosecond proton bunching system has been constructed at Korea Institute of Geoscience and Mineral Resources (KIGAM). This pulsed ion beam will be converted into corresponding duration of neutron pulse, which can reduce the scattered neutron background during neutron spectroscopy. The pulsed beam is obtained by deflection and double bunching by RF field. RF fields are applied to deflection and bunching electrodes as 2 kV p-p, 4 MHz and 2 kV p-p, 8 MHz, respectively. A push-pull RF amplifier has been designed and constructed with a maximum output power of 300 W continuous wave (CW) between 2 and 30 MHz. The main parameters of bunching beam were as follows: 8 MHz repetition rate, 2 ns FWHM, approximately 20% of duty factor and the maximum energy spread of 2 keV within a pulse.

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Abstract  

Neutron capture cross sections on 63Cu and 186W were measured by fast neutron activation method at neutron energies from 1 to 2 MeV. Monoenergetic fast neutrons were produced by 3H(p,n)3He reaction. Neutron energy spread by target thickness, which was assumed to be the main factor of neutron energy spread, was estimated to be 1.5% at neutron energy of 2.077 MeV. Neutron capture cross sections on 63Cu and 186W were calculated by reference comparison method on those of 197Au(n,γ). Not only statistical errors of gamma-counts from samples but also systematic errors in the counting efficiency for HP Ge detector and the uncertainty of areal density of samples were considered in calculating neutron capture cross section. Estimated neutron capture cross sections on 63Cu and 186W were also compared with ENDF-6 data.

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Abstract  

Interferences by uranium fission for95Zr,99Mo,103Ru,140La,141Ce and147Nd have been studied using a single comparator method with two monitors. The effect of the neutron energy spectrum on the interference factor was examined by using the effective activation cross section. All the activities of140La produced during neutron irradiation of uranium were included in the calculation of the factor for lanthanum. The calculated and experimental interference factors are in good agreement within 10% deviation. The results have been applied for the analysis of several rock samples containing uranium in a wide concentration range.

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Abstract  

Instrumental neutron activation analysis has been applied to semiconductor grade silicon to study the concentration levels of impurity elements, the contamination during the single crystal growing process, and the vertical and radial distributions of impurities, along with the decontamination effect in the analysis. Twenty elements of Au, Br, As, W, Cr, Co, Na, Eu, La, Se, Zn, U, Th, Hf, Fe, Sb, Ag, Ce, Tb and Ta have been analyzed in p- and n-type wafers, single crystals and a polycrystal by a single comparator method using two comparators of gold and cobalt. Considerable surface contamination has been found and could be removed by etching the surface with nitric and hydrofluoric acid before and after irradiation. The impurity concentration has been found to be generally increased in the process of single crystal growth. The vertical and radial distributions of impurities have revealed that some impurity elements were more concentrated in the top region of a single crystal rod than in the middle region, and that Br, Cr, La, Eu and Sb were enriched in the central region and As, U and Fe in the outer region.

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