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literature data reveal that the values of HC for ceria surface layers reduction, which does not affect the fluorite structure of the grain, is limited to 17% [ 34 ] or 20% [ 35 ]. In the present case (10 wt% of dopant oxide), the corresponding amounts of

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(atmospheric pressure and 100 °C) than reported in the literature [ 4 – 12 ] with a view to analyze the adsorbed species formed in the first step of the phenol adsorption-oxidation on the Mn–Ce catalyst by DRIFTS spectroscopy. Experimental

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catalyst, the surface area of Ni/C 16 –MoS 2 , in was higher than that of Ni/C 16 –MoS 2 , showing that the activation mode produced different effect on the morphology of the samples. The result was in agreement with the literature [ 9 ] and the in situ

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procedure described in the literature [ 14 ]. Titania was incorporated on the silicas following the procedure described in our previous papers [ 5 , 7 , 8 ]. The composition was 4SiO 2 : 1HTABr: 1Na 2 O: 0.15(NH 4 ) 2 O: 350H 2 O. The silicas were

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Reaction Kinetics, Mechanisms and Catalysis
Authors: Viorel Chihaia, Karl Sohlberg, Rodica Zăvoianu, Anca Cruceanu, Octavian Dumitru Pavel, Emilian Angelescu, Ana Paula Soares Dias, and Ruxandra Bîrjega

dried—Mo-HT HS-Na2MoO4 ; calcined—Mo-CHT HS-Na2MoO4 ; b dried—Mo-HT IE-Na2MoO4 , calcined—Mo-CHT IE-Na2MoO4 ; c dried—Mo-HT HS-(NH4)6Mo7O24 , calcined—Mo-CHT HS-(NH4)6Mo7O24 According to literature data, the

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Reaction Kinetics, Mechanisms and Catalysis
Authors: Viorel Chihaia, Karl Sohlberg, Margarita Gabrovska, Rumeana Edreva-Kardjieva, Dorel Crişan, Peter Tzvetkov, Maya Shopska, and Iskra Shtereva

reaction at low temperatures, i.e. to contain relatively large proportions of nickel, usually over 60 wt% as metal [ 32 ]. An inspection of the literature displays a number of papers published on the synthesis and characterization of alumina

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electrons ( e − ) and VB holes (h + ). Thus far, there is no report in the open literature about increasing the separation of electron–hole as well as photocatalytic efficiency of Bi 3 O 4 Cl by doping or by making composite with another semiconductor metal

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