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, Ed. Fényes I. , Gondolat Kiadó , Budapest , pp. 425 – 474 . [2] Ván P. , Nyíri B. ( 1999 ), Hamilton formalism and variational principle

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Acta Alimentaria
Authors: L. Bóna, N. Adányi, R. Farkas, E. Szanics, E. Szabó, Gy. Hajós, A. Pécsváradi, and E. Ács

.H. & Graham, R.D. (2005): Exploiting genotypic variation in plant nutrient accumulation to alleviate micronutrient deficiency in populations. J. Trace Elem. Med. Biol. , 18 , 319–324. Graham R

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Dedio, W. (1974): Variation in estrogenic-like substances in red clover and alfalfa as related to environment, varieties and stage of growth. Dissertation Abstracts International, B , 34 , 5281–5282. Dedio W

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. 2007 36 431 438 Delcour, J.A., Van Win, H. & Grobet, P.J. (1999): Distribution and structural variation of

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. & Torlak, E. (2007): Seasonal variations on total fatty acid composition of filets of zander ( Sander lucioperca ) in Beysehir Lake (Turkey). Fd Chem. , 103 , 1241–1246. Torlak E

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. Cosmulescu , S. & Trandafir , I. ( 2011 ): Seasonal variation of total phenols in leaves of walnut (Juglans regia L.) . J. Med. Plants Res. , 5 ( 19 ), 4938

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properties of the cast by life data analysis, which is known as the Weibull analysis [ 9 ]. A two-parameter Weibull distribution model was applied to deal with the variation in mechanical properties. 2. Experimental Details

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Resolution and Discovery
Authors: Martial Duchamp, Vadim Migunov, Amir H. Tavabi, Adnan Mehonic, Mark Buckwell, Manveer Munde, Anthony J. Kenyon, and Rafal E. Dunin-Borkowski

Silicon oxide-based resistive switching devices show great potential for applications in nonvolatile random access memories. We expose a device to voltages above hard breakdown and show that hard oxide breakdown results in mixing of the SiOx layer and the TiN lower contact layers. We switch a similar device at sub-breakdown fields in situ in the transmission electron microscope (TEM) using a movable probe and study the diffusion mechanism that leads to resistance switching. By recording bright-field (BF) TEM movies while switching the device, we observe the creation of a filament that is correlated with a change in conductivity of the SiOx layer. We also examine a device prepared on a microfabricated chip and show that variations in electrostatic potential in the SiOx layer can be recorded using off-axis electron holography as the sample is switched in situ in the TEM. Taken together, the visualization of compositional changes in ex situ stressed samples and the simultaneous observation of BF TEM contrast variations, a conductivity increase, and a potential drop across the dielectric layer in in situ switched devices allow us to conclude that nucleation of the electroforming—switching process starts at the interface between the SiOx layer and the lower contact.

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literature data, we found out that such a parameter as the cooling rate in a substance of extraterrestrial origin could be determined by the residual variation of microstructure. Earlier, several techniques were suggested for measurement of

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Resolution and Discovery
Authors: Nada Žnidaršič, Polona Mrak, Eva Rajh, Kristina Žagar Soderžnik, Miran Čeh, and Jasna Štrus

endocuticle is not homogenous, but labeling density appears to alternate in horizontal layers (Figure 3 e and f). This labeling pattern could be explained by a non-homogeneous distribution of WGA-binding ligands in the endocuticle or by a variation of their

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