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- Author or Editor: M. I. Abd El-Ati x
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A series of samples in the system Ni0.65Zn0.35CuxFe2−xO4 (x=0.0, 0.1, 0.2, 0.3, 0.4 and 0.5) were prepared by the usual ceramic technique. X-ray analysis showed that they were cubic spinel (single phase). Young's modulus, the dielectric loss and the change in capacitance under mechanical stress were measured for the samples. Young's modulus decreased with increasing Cu content. This is due to the fact that Cu2+ ions entered the lattice substitutionally for Fe3+ ions at the octahedral sites, creating lattice vacancies gave rise to lattice strain.
The I–V characteristics of an illuminated thin film of HgTe and of a dark sample were recorded. The high values of the photoelectric current of the illuminated sample as the distance decreased may be due to the impurity conductivity, that can be higher than the band conduction predominating at higher incident energy. In the dark, the impurity conductivity is always low compared to the band conductivity occurring at the higher incident energy of mercury light. The low mobility and the increase of the activation energy with increasing temperature suggest that more than one conduction mechanism is involved. The high density of acceptor centres in the thin layer of HgTe may affect the conduction current in certain temperature ranges.
Thin CdSe films were prepared under vacuum at different glass substrate temperatures. The effects of substrate heating and temperature on the X-ray diffraction patterns, electrical, DC current-voltage characteristics and photovoltaic properties were investigated in detail. the results obtained were interpreted mathematically, which led to a hopping conduction mechanism. Valuable semiconducting parameters were evaluated for the thin films investigated, for their useful application in photovoltaic or solar cell industries: surface charge density (4.8×1012 cm−2), thickness of depletion layer (7.4×10−7 cm) and donor concentration (6.5×1018cm−3).
