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  • Author or Editor: A. Osawa x
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Abstract  

Instrumental neutron activation analysis was applied to the determination of trace impurity elements in a silicon single crystal. Impurity concentrations in polysilicon melt were compared with those in a single crystal. Impurity concentrations in artificial quartz were also compared with those in natural quartz. Segregation coefficients in Au, Ir and Sb were determined at different concentrations. The segregation coefficient of an element in a silicon single crystal is constant over a critical concentration, it becomes larger gradually under the critical one, and at last it becomes larger than 1.

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Abstract  

Neutron activation analysis was applied to the determination of trace impurity elements in a silicon ingot. Detection limits of 36 elements were calculated semi — empirically and compared with minimum concentrations detected in a silicon single crystal. The sources of the impurities were estimated from element concentrations detected in polycrystalline silicon and a quartz crucible. Segregation coefficients were determined from the concentration curves in a single crystal and discussed by comparing with reported values.

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