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  • Author or Editor: G. Chambert x
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Abstract  

The determination of phosphorus is presented using the31P(p, α)28Si reaction. The principle of the method and the instrumentation are discussed as well as the precision, sensitivity and the influence of the target thickness. The method is especially suitable for the investigation of diffusion phenomena. The concentration profiles are shown in silicon samples for various times of pretreatment. The interpretation of the profiles is given.

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