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  • Author or Editor: J. Pastol x
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Abstract  

A polycrystalline silicon specimen, cut off from an ingot directionally solidified from upgraded metallurgical grade silicon /UMG-Si/ has been examined using a 1.45 MeV deuteron microbeam. The superficial distributions of carbon and oxygen were determined by direct observation of nuclear reactions. Several carbon concentration ranges were identified. Oxygen is always strongly correlated with carbon, but the nature of this correlation has to be specified. The presence of iron was shown inside areas with strong carbon precipitation.

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Abstract  

An analytical method using neutron activation was developed in order to orientate and check different silicon elaboration processes either as solid ingots or ribbon shaped. This method without chemical separation after irradiation implies the use of a high efficiency semiconductor detector. A particular attention was paid to different causes of error and to the detection limits really obtained. These limits range from 109 to 1015 at.cm–3 for about 30 elements systematically locked for after a 72-h irradiation.

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