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Abstract  

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

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Journal of Radioanalytical and Nuclear Chemistry
Authors: T. Tanaka, M. Mukai, T. Maeda, J. Matsumoto, H. Ogawa, Zhentang Li, Xudong Wang, Zhiwen Fan, Liangtian Guo, and Cunli Liu

Abstract  

Migration experiments with 237Np(V) and 241Am(III) have been performed using a column system, packed with loess, taken from Shanxi, China. The adsorption mechanism of 237Np and 241Am on the loess was examined by a chemical extraction method. Most of 237Np was adsorbed on the influent edge of the column, and the adsorbtion was mainly controlled by surface complexation. However, the migration of 237Np in loess media could be roughly evaluated by the distribution coefficient. In the case of 241Am, particulate, the 241Am species was formed in the influent solution and moved in the column. The 241Am adsorbed on loess was controlled by irreversible reactions. The migration behavior of particulate 241Am in loess media could be expressed by the filtration theory.

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