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Journal of Radioanalytical and Nuclear Chemistry
Authors: M. Misdaq, G. Blondiaux, N. Bordes, A. Giovagnoli, M. Valladon, L. Wei, M. Hage Ali, C. Maggiore and J. Debrun

Abstract  

Several examples of improvements or of new developments in the field of charged particle activation analysis applied to the study of semiconductors are described: determination of carbon at the sub-ppb level in GaAs, use of 20 to 30 MeV protons for trace analysis in InP, study of radioactivation with 12 MeV tritons, and use of channeling to study the lattice location of carbon atoms at trace level in GaAlAs.

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