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  • Author or Editor: Y. Yatsurugi x
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Abstract  

High utility value of charged-particle activation analysis is exemplified by the study on carbon, nitrogen and oxygen in semiconductor silicon. A summary of the present authors' works is shown, and the equilibrium of carbon and oxygen in a silicon melt with ambient carbon monoxide is discussed. Also, a note is given about the chemical separation of18F for the3He activation analysis of various matrices.

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Abstract  

Convenient processes are described for the charged particle activation analysis for carbon, nitrogen, and oxygen in semiconductor silicon. Suitable activation reactions and incident particle energies were selected, and the interferences examined; the activation curves for the Si+3He→11C and Si+3He→18F reactions, which may seriously interfere with3He activation analysis, were measured, and the interference caused by the fission of the matrix itself is discussed. A simple technique for the separation of11C present in silicon is proposed. Reliable determination of as low as several parts per billion of the three elements has thus become possible. Semiconductor silicons of various origin were analyzed for C, N and O, and the behaviour of these elements during zone-melting is reported.

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Résumé  

Par l'emploi de l'analyse par activation aux particules chargées on mesure la concentration du carbone, de l'azote et de l'oxygène dans différentes qualités de silicium pour semi-conducteur. On détermine les solubilités de ces trois éléments dans le silicium solide et liquide au point de fusion. On dessine les courbes d'étalonnage pour la spectrométrie à infra-rouges du carbone et de l'oxygène dans le silicium. On montre que l'utilisation simultanée de l'analyse par activation et de la spectrométrie est efficace pour l'étude de l'état de dispersion des quantités minimes de carbone et d'oxygène dans du silicium de grande pureté. On a aussi étudié, à l'aide d'une nouvelle technique des radiotraceurs, l'évaporation des impuretés légeres du silicium en fusion. Le comportement du carbone, de l'azote et de l'oxygène dans la production du silicium pour semi-conducteur, a donc été éclairci.

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