The radiochemical method has been used for investigation of the adsorption of radium on eighteen inorganic ion exchangers. The distribution coefficient of radium obtained are as follows: barite 2955, celestite 2420, BaSO4 4350, BaCrO4 5245, Ba3(PO4)2 5775, MnO2·nH2O 1681, La2O3·nH2O 4150, Zerolit S/F 2920, etc.
A procedure for the determination of lead in various biological and environmental samples by203Pb radioisotope dilution substoichiometric method is presented. The accuracy of the method by comparison with the literature values of reference materials appears to be good. The standard deviation of the method is less than 10%, and detection limit is about 0.1 g of lead.
In this paper, the Laplace inversion technique, i.e., CONTIN program, has been used to analyze the positron lifetime spectra to obtain continuous annihilation rate distribution (ARD). Two kinds of materials were studied by measuring the positron ARD. In dealuminated Y-type zeolite, five peaks were observed, and the longest component is related to o-Ps lifetime in the secondary pores. In GaAs and in InP semiconductors, the native defects were successfully identified by the difference in positron ARD shape. More evidently, when InP sample was irradiated with high energy heavy ions, the positron ARD showed difference with different irradiation dose. These results indicate that the CONTIN analysis is a good complement to the PATFIT program.
Authors:Z. Chen, F. Xie, X. Wang, Y. Chang, and Z. Zhang
A method of efficiency calibration for the measurement of 88Kr and 138Xe by HPGe γ-spectrometer is proposed in the present paper. The question for the efficient calibration is, how to achieve
homogeneous sources of 88Kr-88Rb and 138Xe-138Cs. The fission product gases were obtained by irradiating a precisely measured amount of U3O8 (90% 235U) filled in a quartz glass ampoule. Source cell was first filled up with stearic acid, and then the fission product gases
were charged into it. Xenon and krypton are not adsorbed on stearic acid, therefore, homogeneous sources of 88Kr-88Rb and 138Xe-138Cs can be prepared. The results of the experiment demonstrate that the method is feasible and successful.
Authors:H. Xie, Z. Lin, Z. Zhang, L. Du, Z. Xin, Y. Ma, X. Ye, and X. Chen
The common wheat line, YW243, developed in our research group, was tested for the resistances of barley yellow dwarf virus (BYDV), powdery mildew (Pm) and stripe rust in field, and was analyzed by molecular markers for convenient trace of the resistant genes in breeding. Genomic in situ hybridization (GISH) analysis and sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE) assay further demonstrated that YW243 was a homozygous multiple translocation line of
Triticum aestivum, Thinopyrum intermedium
(T7DS·7DL-7XL & 1BL·1RS). The disease resistance test and marker analysis showed that YW243 carried seven resistance genes to the three diseases, including
to BYDV on 7DL-7XL,
to powdery mildew on 2AL,
Yr2, Yr9, Sr 31
and a new
to stripe rust on 7B, 1BL, 1RS and 2BL. Restriction fragment length polymorphism (RFLP) markers
, sequence tagged site (STS) marker STS
, simple sequence repeat (SSR) markers
, SSR markers
can be used as diagnostic tools to track
Bdv2, Pm4, Yr2, Yr9
, respectively; and two amplified fragment length polymorphism (AFLP) markers
can also be used to select
Positron lifetime spectra were measured as a function of the time for metallocene polyethylene (mPE), poly(methyl methacrylate) (PMMA), polyamide (PA), and polycarbonate (PC). A decrease in o-Ps intensity with the elapsed time was observed in mPE and PC measured at room temperature and in PMMA measured at 225 K. Formation of free radicals has been supposed to be one of the causes of this effect. The effect of maleic-anhydride (maH) grafted copolymers and its ionomers in mPE/PA blends was also studied. The change in the positron lifetime distribution with increasing maH and the ionomer content revealed an enhanced interaction between mPE and PA phase and the decrease of dispersed mPE particles, which reflected good compatibility of the blend.
The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.