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Journal of Thermal Analysis and Calorimetry
Authors: Zs. Baji, Z. Lábadi, Z. E. Horváth, M. Fried, B. Szentpáli, and I. Bársony

restricts the maximum applicable temperature to <250 °C. This is another reason, why the usual Indium tin oxide (ITO) transparent conductive oxide (TCO) electrode is replaced by doped ZnO. This layer is preferably deposited by PVD methods, RF or reactive

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ZnO added to the system Portland cement — water changes the kinetics of the hydration process substantially. Amorphous zinc hydroxide is formed and inhibits the reaction of tricalcium silicate with water, resulting in an induction period prolongation. This effect depends on the amount of ZnO added to the hydrated paste. The transformation of zinc hydroxide into calcium hydrozincate provokes the further hydration.

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Abstract  

Phase equilibria in subsolidus area in the ZnO-V2O5-Fe2O3 system have been investigated over the whole concentration range of the oxides. The components of this system form two compounds: Zn2FeV3O11 and Zn3Fe4(VO4)6. A solidus area projection onto the component concentration triangle plane of the ZnO-V2O5-Fe2O3 system has been constructed using DTA and XRD methods. 11 subsidiary subsystems can be distinguished in this system. Melting temperatures of mixtures of solid phases coexisting at equilibrium in each of subsidiary subsystems were determined.

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Introduction Quantum dots of II–VI semiconductors are direct-bandgap materials and allow manipulation of properties by controlling the stoichiometry. ZnO is n-type semiconductor having wide and direct band gap of 3.37 eV with a

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Introduction In recently years, semiconductor nanomaterials have attracted considerable attention. ZnO is an important functional semiconductor with direct wide band gap of 3.37 eV and a large exciton binding energy of 60 meV

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required. Moreover, the product performance must meet the growing social demands with regard to safety, sustainability, and minimal environmental impact [ 1 ]. Zinc oxide (ZnO) has a wide direct band gap of 3.37 eV at room temperature and a large

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effluents has therefore received increasing attention. Semiconductor photocatalysis is becoming more and more attractive due to its great potential to solve environmental problems [ 2 , 3 ]. Zinc oxide (ZnO) is one of the most important

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improved, different types of these nanoparticles have been produced. SiO 2 nanoparticle, TiO 2 nanoparticle, and Al 2 O 3 nanoparticle are the most important pigments among these. ZnO nanoparticles, due to the excellent properties which could produce

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were found to be effective for phenol production [ 8 , 9 ]. This study reports the catalytic behavior of metallic copper particles supported on zinc oxide. The structural properties of Cu/ZnO catalysts were characterized by X-ray diffraction (XRD), H 2

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gas and in liquid phase [ 8 ]. In the last few years, there have been a number of studies and reviews about this process [ 9 – 11 ]. Various researchers compared the efficiency of different semiconductor photocatalysts such as ZnO, TiO 2 , SnO 2 , ZrO

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